Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Full PDF Text Transcription for PMDT290UCE (Reference)
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PMDT290UCE 20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET Rev. 1 — 6 October 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-chann...
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eet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions TR1 (N-channel), Static characteristics RDSon drain-source on-state VGS = 4.
PMDT290UCE Datasheet
