PMDT290UNE Datasheet
PMDT290UNE Datasheet (NXP Semiconductors)
NXP Semiconductors
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 66 1.2 Features and .
and benefits
* Very fast switching
* Trench MOSFET technology
* ESD protection up to 2 kV
* AEC-Q101 qualified
1.3 Applications
* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits
1.4 Quick reference data
Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source v.
PMDT290UNE Datasheet (Nexperia)
Nexperia
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benef.
and benefits
* Very fast switching
* Trench MOSFET technology
* ESD protection up to 2 kV
3. Applications
* Relay driver
* High-speed line driver
* Low-side loadswitch
* Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS
d.