PPM6N20V10 Datasheet and Specifications PDF

The enhancement mode MOS is extremely high density cell and low on-resistance. PPM6N20V10 P-Channel MOSFET VDS(V) -20 MOSFET Product Summary RDS(on)(mΩ) ID(A) 15@ VGS=-4.5V -10 Internal struct.

Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Forward Leakage Gate Threshold Voltage Symbol BVDSS IDSS IGSS VGS(th) Static Drain-Source On-Resistance RDS(ON) Forward Trans conductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain(Miller) Charge Input Capacitance.

WͲŚĂŶŶĞůůŽǁŽŶͲƌĞƐŝƐƚĂŶĐĞDK^&d PRIMARY CHARACTERISTICS VDS(V) RDS(on)(mΩ) ID(A) -20 14@VGS=-4.5V -10 FEATURES  The enhancement mode MOS is extremely high density cell and low on-resistance.

* The enhancement mode MOS is extremely high density cell and low on-resistance. Absolute maximum rating@25℃ Rating Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation Continuous Pulsed TA=25℃ TA=125℃ TA=25℃ TA=70℃ Operating and Storage Junction Temperature Range .