| Part Number | R6006KNX Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source.
*Drain Current *ID=6A@ TC=25℃ *Drain Source Voltage- : VDSS=600V(Min) *Static Drain-Source On-Resistance : RDS(on) = 830mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies and . |
R6006KNX Datasheet and Specifications PDF
The R6006KNX is a N-Channel MOSFET.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | R6006KNX Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | ROHM |
| Overview | R6006KNX Nch 600V 6A Power MOSFET Datasheet lOutline VDSS 600V RDS(on)(Max.) 0.83Ω ID ±6A TO-220FM PD 40W lFeatures 1) Low on-resistance 2) Ultra fast switching 3) Paral. 1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C. |