R6007JNJ Datasheet
R6007JNJ Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source.
*Drain Current
*ID=7A@ TC=25℃
*Drain Source Voltage-
: VDSS=600V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 780mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
*Designed for use in switch mode power supplies and .
R6007JNJ Datasheet (ROHM)
ROHM
R6007JNJ Nch 600V 7A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.780Ω ±7A 96W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be .
1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline LPT(S) lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Embossed Tape Packing code.