Datasheet4U Logo Datasheet4U.com

R6030ENX Datasheet

The R6030ENX is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberR6030ENX
ManufacturerInchange Semiconductor
Overview ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source.
*Drain Current
  –ID= 30A@ TC=25℃
*Drain Source Voltage- : VDSS=600V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 130mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies an.
Part NumberR6030ENX
DescriptionPower MOSFET
ManufacturerROHM
Overview R6030ENX   Nch 600V 30A Power MOSFET    Datasheet VDSS RDS(on)(Max.) ID PD 600V 0.130Ω ±30A 86W lFeatures 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is . 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant lOutline TO-220FM          lInner circuit   lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensi.