| Part Number | RU30E4B |
|---|---|
| Manufacturer | Ruichips |
| Overview |
D
G S
SOT23
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
T.
* 30V/4A, RDS (ON) =30mΩ(Typ.)@VGS=10V RDS (ON) =55mΩ(Typ.)@VGS=4.5V * Super High Dense Cell Design * ESD protected(Rating 2KV HBM) * Reliable and Rugged * Lead Free and Green Devices Available (RoHS Compliant) Applications * Load Switch Pin Description D G S SOT23 D G Absolute Maximum Ratings Sy. |
RU30E4B Datasheet
The RU30E4B is a N-Channel Advanced Power MOSFET.
| Part Number | RU30E4B |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | VBsemi |
| Overview |
RU30E4B-VB
RU30E4B-VB Datasheet
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.030 at VGS = 10 V 30
0.033 at VGS = 4.5 V
ID (A)a 6.5 6.0
Qg (Typ.) 4.5 nC
TO-.
* Halogen-free According to IEC 61249-2-21 Definition * TrenchFET® Power MOSFET * 100 % Rg Tested * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * DC/DC Converter D G1 S2 3D Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drai. |