SPD15P10PG Datasheet and Specifications PDF

SIPMOS® Small-Signal-Transistor Features • P-Channel • Enhancement mode • Normal level • Avalanche rated • Pb-free lead plating; RoHS compliant ° Qualified according to AEC Q101 Product Summary V DS .

* P-Channel
* Enhancement mode
* Normal level
* Avalanche rated
* Pb-free lead plating; RoHS compliant ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPD15P10P G -100 V 0.24 Ω -15 A PG-TO252-3 Type SPP15P10P G SPD15P10P G Package PG-TO220-3 PG-TO252-3 Marking 15P10P 15P.

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤240mΩ(@VGS= -10V; ID= -10.6A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot vari.

*Static drain-source on-resistance: RDS(on)≤240mΩ(@VGS= -10V; ID= -10.6A)
*Advanced trench process technology
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Fast switching application.
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB.