Part Number	SSM3K56ACT Datasheet
Manufacturer	Toshiba
Overview	MOSFETs Silicon N-Channel MOS SSM3K56ACT 1. Applications • High-Speed Switching 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS. (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 840 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Configuration CST3 SSM3K56ACT 1.Gate 2.Source 3.Drain ©201.