STB30NF20 Datasheet and Specifications PDF

·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuo.

*Drain Current : ID= 30A@ TC=25℃
*Drain Source Voltage : VDSS= 200V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) @ VGS= 10V
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*motor drive, DC-DC converter, power sw.

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary swit.

Type VDSS RDS(on) ID STP30NF20 200V 0.075Ω 30A STW30NF20 200V 0.075Ω 30A STB30NF20 200V 0.075Ω 30A
* Gate charge minimized
* 100% avalanche tested
* Excellent figure of merit (RDS*Qg)
* Very good manufactuing repeability
* Very low intrinsic capacitances PTOT 125W 125W 125W Application
* Sw.