STP8NM60 Datasheet and Specifications PDF

The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-.

Type STD5NM60 STD5NM60-1 STB8NM60 STP8NM60 STP8NM60FP VDSS 650 V 650 V 650 V 650 V 650 V RDS(on) <1Ω <1Ω <1Ω <1Ω <1Ω ID 5A 5A 5A 8A 8 A(1) Pw 96 W 96 W 100 W 100 W 30 W
* 100% avalanche tested
* HIgh dv/dt and avalanche capabilities
* Low input capacitance and gate charge
* Low gate input resi.

isc N-Channel MOSFET Transistor STP8NM60 FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1Ω(Max) ·100% avalanche teste.

*Drain Current
*ID= 8A@ TC=25℃
*Drain Source Voltage- : VDSS= 600V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 1Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Switching application ABSOLUTE MAXIMUM RATINGS(Ta=.