| Part Number | STS2309A Datasheet |
|---|---|
| Manufacturer | VBsemi |
| Overview |
STS2309A-VB
STS2309A-VB Datasheet
P-Channel 20-V (D-S) MOSFET
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)a
0.060 at VGS = - 10 V
- 4.0
- 20
0.065 at VGS = - 4.5 V
- 3..
* Halogen-free According to IEC 61249-2-21 Definition * TrenchFET® Power MOSFET * 100 % Rg Tested * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * Load Switch * PA Switch * DC/DC Converters G1 S2 3D ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Sou. |
STS2309A Datasheet and Specifications PDF
The STS2309A is a P-Channel MOSFET.
| Part Number | STS2309A Datasheet |
|---|---|
| Description | P -Channel Enhancement Mode Field Effect Transistor |
| Manufacturer | SamHop Microelectronics |
| Overview | S amHop Microelectronics C orp. S T S 2309A Dec 22 2004 P -C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) Max ID -2.3A R DS (ON) S u. age Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = -250uA V DS = -16V, V GS = 0V V GS = 10V, V DS = 0V V DS = V GS , ID =-250uA V GS = -4.5V, ID = -2.3A V GS = -2.5V, ID = -1.0A V DS = -5V, V GS = -4.5V V DS. |