| Part Number | TIC226D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc Triacs
TIC226D
FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
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*With TO-220 package *Sensitive Gate Triacs *Glass Passivated *Max IGT of 50 mA (Quadrants 1~3) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state v. |
TIC226D Datasheet
The TIC226D is a Triacs.
| Part Number | TIC226D |
|---|---|
| Description | SILICON TRIACS |
| Manufacturer | Bourns |
| Overview | TIC226 SERIES SILICON TRIACS 8 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1 - 3) This series is currently available, but not recommended for new designs. C Tstg TL VALUE 400 600 700 800 8 70 ±1 2.2 0.9 -40 to +110 -40 to +125 230 UNIT V A A A W W °C °C °C NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above . |
| Part Number | TIC226D |
|---|---|
| Description | SILICON BIDIRECTIONAL TRIODE THYRISTOR |
| Manufacturer | Comset Semiconductor |
| Overview | This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. ABSOLUTE MA. temperature (pulse width ≤200 2.2 PGM µs) Average gate power dissipation at (or 0.9 PG(AV) below) 85°C case (see Note5) www.DataSheet4U.com Operating case temperature range -40 to +110 TC Storage temperature range -40 to +125 Tstg Lead temperature 1.6 mm from case for 10 230 TL seconds Page 1 of 3. |