| Part Number | TIP122F |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A = 4.0V(Max)@ I. Thermal Resistance,Junction to Ambient 62.5 ℃/W TIP122F isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Susta. |
TIP122F Datasheet
The TIP122F is a NPN Transistor.
| Part Number | TIP122F |
|---|---|
| Description | NPN Transistor |
| Manufacturer | JCET |
| Overview | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TIP120F,121F,122F DARLINGTON TRANSISTOR (NPN) TO-220F TIP125F,126F,127F DARLINGTON TRANSISTOR (PNP) FEATUR. Medium Power Complementary Silicon Transistors 1.BASE 2.COLLECTOR 3.EMITTER 123 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO VCEO VEBO IC PC RθJA RθJC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collect. |
| Part Number | TIP122F |
|---|---|
| Description | NPN/PNP SILICON POWER DARLINGTON TRANSISTORS |
| Manufacturer | Continental Device India |
| Overview | SYMBOL Collector -Base Voltage VCBO Collector -Emitter Voltage VCEO Emitter Base Voltage VEBO Collector Current -Continuous IC Collector Current (Peak) ICM Base Current IB Total Power Di. . |