| Part Number | TIP122FP |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A = 4.0V(Max)@ I. on to Case 4.3 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W TIP122FP isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO. |
TIP122FP Datasheet
The TIP122FP is a Silicon NPN Power Transistor.
| Part Number | TIP122FP |
|---|---|
| Description | Transistor |
| Manufacturer | STMicroelectronics |
| Overview |
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very .
* Low collector-emitter saturation voltage * Complementary NPN - PNP transistors * TO-220FP isolated package UL compliant Application * General purpose linear and switching Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. |