| Part Number | TIPL760C Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Rugged Triple-duffused planar construction
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector .
*Collector-Emitter Breakdown Voltage- : V(BR)CEO = 550V(Min.) *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Rugged Triple-duffused planar construction ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector. |
TIPL760C Datasheet and Specifications PDF
The TIPL760C is a NPN Transistor.
Key Specifications
| Package | TO-220 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | TIPL760C Datasheet |
|---|---|
| Description | NPN SILICON POWER TRANSISTORS |
| Manufacturer | Power Innovations Limited |
| Overview | TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 4 A Continuous Collect. E 1100 1200 1100 1200 500 550 10 4 8 75 -65 to +150 -65 to +150 UNIT V V V V A A W °C °C PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necess. |