| Part Number | TK11A65W |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
iscN-Channel MOSFET Transistor
INCHANGE Semiconductor
TK11A65W，ITK11A65W
·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.39Ω ·Easy to control Gate switching ·Enhancement mode: Vth = 2.5 to 3..
*Low drain-source on-resistance: RDS(ON) = 0.39Ω *Easy to control Gate switching *Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.45mA) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Switching Voltage Regulators *ABSOLU. |
TK11A65W Datasheet
The TK11A65W is a N-Channel MOSFET.
| Part Number | TK11A65W |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Manufacturer | Toshiba |
| Overview | MOSFETs Silicon N-Channel MOS (DTMOS) TK11A65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.33 Ω (typ.) by used to Super Junction Structu. (1) Low drain-source on-resistance: RDS(ON) = 0.33 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.45 mA) 3. Packaging and Internal Circuit TK11A65W 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolu. |