| Part Number | TPC8229-H Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | TPC8229-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8229-H 1. Applications • • DC-DC Converters CCFL Inverters 2. Features (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 2.4 nC . (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 2.4 nC (typ.) Low drain-source on-resistance: RDS(ON) = 53 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 3: Source . |
TPC8229-H Datasheet and Specifications PDF
The TPC8229-H is a Silicon N-Channel MOSFET.
| Part Number | TPC8229-H Datasheet |
|---|---|
| Description | N-Channel 80V MOSFET |
| Manufacturer | VBsemi |
| Overview |
TPC8229-H-VB
TPC8229-H-VB Datasheet N-Channel 80 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
80
0.062 at VGS = 10 V
ID (A)a 3.5
Qg (Typ.) 7.3 nC
FEATURES • Halogen-free.
* Halogen-free According to IEC 61249-2-21 Definition * Trench Power MOSFET * 100 % Rg and UIS Tested * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * DC/DC Conversion - Notebook System Power S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 D1 D2 G1 G2 S1 S2 Absolute Maximum Ra. |