Datasheet Summary
MOSFETs Silicon N-Channel MOS (U-MOS-H)
1. Applications
- - DC-DC Converters CCFL Inverters
2. Features
(1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 2.4 nC (typ.) Low drain-source on-resistance: RDS(ON) = 53 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. Packaging and Internal Circuit
1, 3: Source 2, 4: Gate 5, 6, 7, 8: Drain
SOP-8
Start of mercial production
2012-05 2014-01-07 Rev.3.0
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