TPC8229-H - Silicon N-Channel MOSFET

Product Overview

Toshiba

Part number	TPC8229-H
Manufacturer	Toshiba
File Size	255.74 KB
Description	Silicon N-Channel MOSFET
Datasheet	TPC8229-H Datasheet
Additional preview pages of the TPC8229-H datasheet.

(1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 2.4 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 53 mΩ (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 3: Source 2, 4: Gate 5, 6, 7, 8: Drain SOP-8 Start of commercial production 1 2012-05 2014-01-07 Rev.3.0 TPC8229-H 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics.

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Published: Sep 2, 2014 |