Datasheet4U Logo Datasheet4U.com

TPC8229-H - Silicon N-Channel MOSFET

Key Features

  • (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 2.4 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 53 mΩ (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 3: Source 2, 4: Gate 5, 6, 7, 8: Drain SOP-8 Start of commercial production 1 2012-05 2014-01-07 Rev.3.0 TPC8229-H 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics.

📥 Download Datasheet

Datasheet Details

Part number TPC8229-H
Manufacturer Toshiba
File Size 255.74 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TPC8229-H Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TPC8229-H N-Channel 80V MOSFET VBsemi
TPC8221-H Silicon N-Channel MOSFET Toshiba Semiconductor
TPC8201 N-Channel MOSFET Toshiba Semiconductor
TPC8202 N-Channel MOSFET Toshiba Semiconductor
TPC8203 N-Channel MOSFET Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number Description
TPC8223-H Silicon N-Channel MOSFET
TPC8224-H Silicon N-Channel MOSFET
TPC8227-H Silicon N-Channel MOSFET
TPC8228-H Silicon N-Channel MOSFET
TPC8211 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TPC8229-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8229-H 1. Applications • • DC-DC Converters CCFL Inverters 2. Features (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 2.4 nC (typ.) Low drain-source on-resistance: RDS(ON) = 53 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 3: Source 2, 4: Gate 5, 6, 7, 8: Drain SOP-8 Start of commercial production 1 2012-05 2014-01-07 Rev.3.0 TPC8229-H 4.