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TPC8227-H - Silicon N-Channel MOSFET

Key Features

  • (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 2.4 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 3: Source 2, 4: Gate 5, 6, 7, 8: Drain SOP-8 Start of commercial production 1 2012-05 2014-01-07 Rev.2.0 TPC8227-H 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise spec.

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Datasheet Details

Part number TPC8227-H
Manufacturer Toshiba
File Size 257.12 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TPC8227-H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPC8227-H MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8227-H 1. Applications • • DC-DC Converters CCFL Inverters 2. Features (1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 2.4 nC (typ.) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1, 3: Source 2, 4: Gate 5, 6, 7, 8: Drain SOP-8 Start of commercial production 1 2012-05 2014-01-07 Rev.2.0 TPC8227-H 4.