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TPC8229-H-VB
www.VBsemi.com
TPC8229-H-VB Datasheet N-Channel 80 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
80
0.062 at VGS = 10 V
ID (A)a 3.5
Qg (Typ.) 7.3 nC
FEATURES • Halogen-free According to IEC 61249-2-21
Definition
• Trench Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • DC/DC Conversion
- Notebook System Power
S1 1 G1 2 S2 3 G2 4
SO-8 Top View
8 D1 7 D1 6 D2 5 D2
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TA=25°C TA=70°C
ID
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
Repetitive avalanche energy L=0.