Datasheet Summary
MOSFETs Silicon N-Channel MOS (U-MOS-H)
1. Applications
- High-Efficiency DC-DC Converters
- Notebook PCs
- Mobile Handsets
2. Features
(1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 3.6 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 17 mΩ (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. Packaging and Internal Circuit
SOP-8
1, 3: Source 2, 4: Gate 5, 6, 7, 8: Drain
Start of mercial production
2010-10
2014-02-27
Rev.4.0
4....