.
AUO
G065VN01-V2 - LCD
ϭʳ Preliminary Specification Ϯʳ Final Specification Module Model Name 6.5 Inch Color TFT-LCD G065VN01 V2 G065VN01 V2 Customer Date Approved by .SCK-065 - NTC POWER THERMISTOR
THINKING THINKING ® THINKING THINKING ® E 138827 NTC POWER THERMISTOR LR 97495 15Ø SERIES Ł POWER DERATING CURVE Ł SPECIFICATION Part No SCK-1R.
ON Semiconductor
NTH4L015N065SC1 - SiC MOSFET
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, TO-247-4L NTH4L015N065SC1 Features • Typ. RDS(on) = 12 mW @ .
ON Semiconductor
MC33065 - High Performance Dual-Channel Controller
MC34065, MC33065 High Performance Dual Channel Current Mode Controller The MC34065 is a high performance, fixed frequency, dual current mode control.
Silergy
SY7065A - 1.8V Minimum Input and 5.5V Maximum Output 5A Peak Current Synchronous Boost
Application Note: SY7065/SY7065A 1.8V Minimum Input and 5. 5V Maximum Output 5A Peak Current Synchronous Boost with Output Disconnect General Descrip.
ON Semiconductor
FFSB1065B-F085 - Silicon Carbide Schottky Diode
Silicon Carbide Schottky Diode 650 V, 10 A FFSB1065B-F085 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provi.
GaN Systems
GS-065-004-1-L - 650V E-mode GaN transistor
Please note that GaN Systems is an Infineon Technologies Company The document following this cover page is marked as “GaN Systems” document as this is.
GaN Systems
GS-065-011-6-LR - 700V E-mode GaN transistor
Features • 700 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, 8x8 mm PDFN package • RDS(on) = 125 mΩ •.
GaN Systems
GS-065-011-2-L - 650V E-mode GaN transistor
Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled 8x8 mm PDFN package • RDS(on) = 150 mΩ • .
Jilin Sino
JT040K065WED - N-CHANNEL IGBT
R MAIN CHARACTERISTICS IC VCE Vcesat-ty（p Vge=15V） 40 A 650V 1.7V N N-CHANNEL IGBT JT040K065WED/AED Package UPS APPLICATIONS Genera.
JILIN SINO
TT030U065FBA - N-CHANNEL IGBT
N N-CHANNEL IGBT R TT030U065FBA MAIN CHARACTERISTICS IC VCES Vcesat-typ 30A 650V 1.7V Package PFC APPLICATIONS Power factor corrector .CN3065 - Lithium Ion Battery Charger
CONSONANCE Lithium Ion Battery Charger for Solar-Powered Systems CN3065 General Description: The CN3065 is a complete constant-current /constant vol.
Analog Devices
AD8065 - FastFET Op Amps
Data Sheet FEATURES Qualified for automotive applications FET input amplifier 1 pA input bias current Low cost High speed: 145 MHz, −3 dB bandwidth (G.
Infineon
IPZ65R065C7 - MOSFET
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 650V CoolMOS™ C7 Power Transistor IPZ65R065C7 Data Sheet Rev. 2.1 Final Power Man.
AUO
A065VL01-V2 - Color TFT LCD
Doc. Version Total Page Date 0.3 2006/11/15 29 Product Specification www.DataSheet.co.kr 6.5 COLOR TFT-LCD MODULE MODEL NAME: A065VL01 V2 < < >.
STMicroelectronics
STPSC6H065DLF - 650V power Schottky silicon carbide diode
STPSC6H065DLF Datasheet 650 V power Schottky silicon carbide diode Product status link STPSC6H065DLF Product summary Symbol Value IF(AV) 6A VRR.
ON Semiconductor
NFVA35065L32 - 3-Phase 650V 50A Automotive Smart Power Module
DATA SHEET www.onsemi.com ASPM 27 Series 3−Phase 650 V, 50 A Automotive Smart Power Module NFVA35065L32 General Description NFVA35065L32 is an advan.
ON Semiconductor
NVHL025N065SC1 - SiC MOSFET
MOSFET - SiC Power, Single N-Channel, TO247-3L 650 V, 19 mW, 99 A NVHL025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @.
ON Semiconductor
NVH4L060N065SC1 - SiC MOSFET
MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 44 mW, 47 A NVH4L060N065SC1 Features • Typ. RDS(on) = 44 mW @ VGS = 18 V Typ. RDS(on) = 60 mW .
ON Semiconductor
NTH4L045N065SC1 - SiC MOSFET
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 33 mohm, 650 V, M2, TO-247-4L NTH4L045N065SC1 Features • Typ. RDS(on) = 33 mW @ .
