0.065 Datasheet | Specifications & PDF Download

NCEP065N12AGU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimize

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ϭʳ Preliminary Specification Ϯʳ Final Specification Module Model Name 6.5 Inch Color TFT-LCD G065VN01 V2 G065VN01 V2 Customer Date Approved by

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Silicon Carbide (SiC) JFET – EliteSiC, Power N-Channel, TO247-3, 650 V, 25 mohm UJ3N065025K3S Description onsemi offers the High-Performance G3 SiC no

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First Edition Oct 24, 2003 LCD Module Technical Specification Type No. Final Revision ****** T-51750GD065J-FW-AB Approved by (Quality Assurance

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E6D30065D E-Series Automotive 650 V, 30 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schott

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www.DataSheet4U.net G065VN01 V0 Product Specification Date: March 6, 2006 Product Specification 6.5” VGA Color TFT-LCD Module Model Name: G065VN0

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www.DataSheet4U.net ( ) Preliminary Specifications (V ) Final Specifications Module Model Name 6.5 Inch Color TFT-LCD G065VN01 V1 G065VN01 V1 Glei

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Click here to ask about the production status of specific part numbers. MAXQ1065 Ultra Low-Power Cryptographic Controller with ChipDNATM for Embedd

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Silicon Carbide (SiC) Diode – EliteSiC, TO220-2, 16 A, 650 V SiC Merged PiN-Schottky (MPS) Diode UJ3D06516TS Description onsemi offers the 3rd generat

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E6D20065A E-Series Automotive 650 V, 20 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schott

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7MBR150XRA065-50 Power Module(X series) 650V / 150A / PIM ◼ Feactures Low V CE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dyna

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7MBR150XNA065-50 Power Module(X series) 650V / 150A / PIM ◼ Feactures Low V CE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dyna

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IPT60R065S7 MOSFET 600V CoolMOSª SJ S7 Power Device IPT60R065S7 enables the best price performance for low frequency switching applications. CoolMOS™

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9FGL02x1/04x1/06x1/08x1D 3.3V PCIe Gen1-6 Clock Generator Family Datasheet The 9FGL02x1/04x1/06x1/08x1D devices comprise a family of 3.3V PCIe Gen1–

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Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TOLL NTBL032N065M3S Features • Typical RDS(on) = 32 mW @ VGS = 18 V • Ultra Low Gate Cha

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WNSC6D10650Y Silicon Carbide Diode Rev.01 - 23 January 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a IITO2202L

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