0.32 Datasheet | Specifications & PDF Download

Elektronische Bauelemente KTC3205 NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEAT

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Green Mode Power Switch FSDH321, FSDL321 Description Each product in the FSDx321 (x for H, L) family consists of an integrated Pulse Width Modulator

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IP5328P Fully-Integrated Bi-directional PD3.0 and Fast Charge Power Bank SOC with Multiple Input and Output Ports Features  Support multiple ports

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SAMSUNG Confidential Customer: VD DATE: 11.Dec.2012 SAMSUNG TFT-LCD MODEL: LSF320HN02-A (LCD Panel + Driver Ass’y Kit) The Information described

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ChipSourceTek LTK5328PBTL_28W  LTK5328 LTK5328 2 8W ， PBTL 、、AGC 、AB/D 、 、 EMI。PBTL ， ，。 ， ，， ，。 LTK5328 2 ALC ， ，。 AB/D ，AB FM 。 RF 。  L

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STM32F103x8 STM32F103xB Medium-density performance line ARM®-based 32-bit MCU with 64 or 128 KB Flash, USB, CAN, 7 timers, 2 ADCs, 9 com. interfaces D

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LTK5325 25.3WG   LTK5325 2 5.3W ，、、AB/D 。、 EMI， ，， ， ，。LTK5325  2.8V-5.5V  BOOST   （ALC）  D 、 EMI 2 ，  、 ，。  THD+N=10%，VB

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE CQ AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE CQ AND MUST

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ESP32-S3-WROOM-1 ESP32-S3-WROOM-1U Datasheet 2.4 GHz Wi-Fi (802.11 b/g/n) and Bluetooth® 5 (LE) module Built around ESP32-S3 series of SoCs, Xtensa® d

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PT320AT01-1 Product Specification Model name: PT320AT01-1 Ver. 1.0 Date: 29. Mar.2017 ( ) Preliminary Specification ( v ) Approval Specification A

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STM32F405xx STM32F407xx Arm® Cortex®-M4 32b MCU+FPU, 210DMIPS, up to 1MB Flash/192+4KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interf

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Global LCD Panel Exchange Center www.panelook.com PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BEG REPRODUCED OR COPI

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IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F

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PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE CQ AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE CQ AND MUST

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CI-MCP Specification 16GB eNAND (x8) + 16Gb LPDDR3 (x32) This document is a general product description and is subject to change without notice. SK h

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SPEC. NUMBER - PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE XINSHENG AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSI

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INTEGRATED CIRCUITS NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier Product specification IC11 Data Handbook 1997 Sept

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AON6324 30V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS an

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