0.600 Datasheet | Specifications & PDF Download

isc Thyristors INCHANGE Semiconductor BT137S-600E DESCRIPTION ·With TO-252( DPAK ) packaging ·Operating in 4 quadrants ·High commutation capability

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isc Triacs BTA08-600B FEATURES ·With TO-220AB insulated package ·Suitables for general purpose applications where gate high sensitivity is required.

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Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N

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-, +66DHK-, $+6 SUPER FAST RECOVERY RECTIFIER VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes FEATURES • For thorough hole applications • Low

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www.DataSheet4U.com FQB5N60C / FQI5N60C FQB5N60C / FQI5N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow

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FQP8N60C — N-Channel QFET® MOSFET FQP8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω April 2014 Description These N-Channel enhancement mode power

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Silan Microelectronics SVSP14N60F(FJD)(T)D2_Datasheet 14A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP14N60F(FJD)(T)D2 is an N-channe

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AXS4054 600mA AXS4054 AXS4054 AXS4054/  ：600mA ，  0.5uA ，USB，  MOSFET、 ，。  ，  。 AXS40544.2V， 。 k 1/10，AXS4054。 ，AXS4054 eTe 05uA

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PB6 SERIES KBPC6 SERIES SINGLE-PHASE SILICON BRIDGE CHENG- YI ELECTRONIC VOLTAGE RANGE 50 TO 1000 VOLTS CURRENT 3.0 Amperes FEATURES Surge overload

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3M EMI Absorber with Shielding AB6000 Series, AB6000S Series, and AB6000G Series Data Sheet October 2008 ™ Description 3M™ EMI Absorber with Shield

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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SVF10N60T/F/FG/S/K_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect

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KBJ600~6010 KBJ-6 DIMENSIONS IN INCH (MM) FEATURE Surge overload rating –150Amps peak Ideal for printed circuit board Reliable low cost construc

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IPD70R600P7S MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to th

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SVS11N60D/F/S/FJ/T/KD2_Datasheet 11A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N60D/F/S/FJ/T/KD2 is an N-channel enhancement mode high voltage

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19-5902; Rev 0; 6/11 EVALUATION KIT AVAILABLE MAX2042A SiGe High-Linearity, 1600MHz to 3900MHz Upconversion/Downconversion Mixer with LO Buffer Gener

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Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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SMBJ Datasheet 600 W TVS in SMB K Bidirectional A Unidirectional Product status link SMBJ SMBJ5.0A, SMBJ5.0CA, SMBJ6.0A, SMBJ6.0CA, SMBJ6.5A, SM

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PTVSxP1UTP series High-temperature 600 W Transient Voltage Suppressor Rev. 1 — 11 October 2011 Product data sheet 1. Product profile 1.1 General

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MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

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