02N120 Datasheet | Specifications & PDF Download

SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs •

(13 views)

www.DataSheet4U.com www.DataSheet4U.com SGP02N120, Fast IGBT in NPT-technology • 40lower Eoff compared to previous generation • Short circuit withsta

(13 views)

www.DataSheet4U.net SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to pre

(12 views)

SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs •

(10 views)

www.DataSheet4U.com SGP02N120, Fast IGBT in NPT-technology • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • De

(8 views)

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY02N120P IXTP02N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM T

(8 views)

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY02N120P IXTP02N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM T

(5 views)

SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time

(4 views)

SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs •

(3 views)

SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Sh

(1 views)