www.DataSheet4U.net SKP02N120 SKB02N120 Fast IGBT.
Infineon Technologies
02N120 - SKP02N120
www.DataSheet4U.net SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to pre.
Infineon Technologies AG
GB02N120 - SGB02N120
www.DataSheet4U.com www.DataSheet4U.com SGP02N120, Fast IGBT in NPT-technology • 40lower Eoff compared to previous generation • Short circuit withsta.
Infineon Technologies AG
SKB02N120 - IGBT
SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time .
Infineon Technologies
SGD02N120 - IGBT
SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • .
Infineon
SGI02N120 - Fast IGBT in NPT-technology
SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • .
Infineon Technologies
SGP02N120 - IGBT
SGP02N120 SGD02N120, SGI02N120 Fast IGBT in NPT-technology • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • .
IXYS
IXTP02N120P - Power MOSFET
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY02N120P IXTP02N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM T.
IXYS
IXTY02N120P - Power MOSFET
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY02N120P IXTP02N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM T.
Infineon Technologies AG
SKP02N120 - IGBT
SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Sh.
Infineon Technologies
SGB02N120 - IGBT
www.DataSheet4U.com SGP02N120, Fast IGBT in NPT-technology • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • De.