02N120 (Infineon Technologies)
SKP02N120
www.DataSheet4U.net
SKP02N120 SKB02N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 40lower Eoff compared to pre
(34 views)
SGD02N120 (Infineon Technologies)
IGBT
SGP02N120 SGD02N120, SGI02N120
Fast IGBT in NPT-technology
• 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs •
(31 views)
IXTP02N120P (IXYS)
Power MOSFET
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY02N120P IXTP02N120P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM T
(31 views)
SKP02N120 (Infineon Technologies AG)
IGBT
SKP02N120 SKB02N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 40lower Eoff compared to previous generation • Sh
(30 views)
GB02N120 (Infineon Technologies AG)
SGB02N120
www.DataSheet4U.com www.DataSheet4U.com
SGP02N120,
Fast IGBT in NPT-technology
• 40lower Eoff compared to previous generation • Short circuit withsta
(30 views)
SGP02N120 (Infineon Technologies)
IGBT
SGP02N120 SGD02N120, SGI02N120
Fast IGBT in NPT-technology
• 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs •
(27 views)
SGB02N120 (Infineon Technologies)
IGBT
www.DataSheet4U.com
SGP02N120,
Fast IGBT in NPT-technology
• 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • De
(24 views)
SKB02N120 (Infineon Technologies AG)
IGBT
SKB02N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
Allowed number of short circuits: <1000; time
(23 views)
IXTY02N120P (IXYS)
Power MOSFET
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY02N120P IXTP02N120P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM T
(23 views)
SGI02N120 (Infineon)
Fast IGBT in NPT-technology
SGP02N120 SGD02N120, SGI02N120
Fast IGBT in NPT-technology
• 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs •
(18 views)
