Type !"#$%!&™3 Power-Transistor Features • F.
HUAYI
3
HYG080N03LA1S - N-Channel MOSFET
HYG080N03LA1S N-Channel Enhancement Mode MOSFET Feature 30V/12A RDS(ON)=7.3mΩ(typ.)@VGS = 10V RDS(ON)=10.1mΩ(typ.)@VGS = 4.5V 100% Avalanche Tes.
Infineon
3
IPP080N03L - Power-Transistor
Type !"#$%!&™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JED.
Infineon
2
IPP080N03LG - Power-Transistor
Type !"#$%!&™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JED.
Infineon
2
BSC080N03LSG - Power-Transistor
OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for targ.
Infineon
2
080N03LS - Power MOSFET
OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for targ.
Infineon
2
080N03L - Power Transistor
Type !"#$%!&™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JED.
Infineon
1
IPB080N03LG - Power-Transistor
Type !"#$%!&™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JED.
Infineon
1
IPB080N03L - Power-Transistor
Type !"#$%!&™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JED.
INCHANGE
1
IPP080N03L - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP080N03L，IIPP080N03L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancem.
INCHANGE
1
IPB080N03L - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current :ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum L.