080N03L Datasheet | Specifications & PDF Download

Type #$% &™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JED

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Type #$% &™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JED

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP080N03L，IIPP080N03L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancem

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OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for targ

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OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for targ

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OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for targ

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Type #$% &™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JED

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isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current :ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum L

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Type #$% &™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JED

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Type #$% &™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JED

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HYG080N03LA1S N-Channel Enhancement Mode MOSFET Feature  30V/12A RDS(ON)=7.3mΩ(typ.)@VGS = 10V RDS(ON)=10.1mΩ(typ.)@VGS = 4.5V  100% Avalanche Tes

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