IPB080N03L N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor *.
Drain Current :ID= 50A@ TC=25℃. Drain Source Voltage : VDSS= 30V(Min). 100% avalanche tested. Minimum Lot-to-Lot variations for robus.

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Datasheet Specifications

Part number: IPB080N03L
Manufacturer: INCHANGE
File Size: 238.46 KB
Datasheet: IPB080N03L-INCHANGE.pdf
Description: N-Channel MOSFET

Applications

* Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 30 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous 50 A ID(puls) Pulse Drain Current 350 A

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IPB080N03L N-Channel MOSFET INCHANGE

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