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IPB080N06NG Power-Transistor

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Description

www.DataSheet4U.com IPB080N06N G IPP080N06N G OptiMOS® Power-Transistor .

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Applications

* N-channel enhancement - normal level
* 175 °C operating temperature
* Avalanche rated
* Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 7.7 80 V mΩ A Type IPB080N06N G IPP080N06N G Package Marking P-TO263-3-2 080N06N

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IPB080N06NG Power-Transistor Infineon Technologies
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IPB081N06L3G
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