Part number:
IPB080N06NG
Manufacturer:
Infineon ↗ Technologies
File Size:
481.53 KB
Description:
Power-transistor.
* Low gate charge for fast switching applications
* N-channel enhancement - normal level
* 175 °C operating temperature
* Avalanche rated
* Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 7.7 80 V mΩ A Type IPB080N0
IPB080N06NG Datasheet (481.53 KB)
IPB080N06NG
Infineon ↗ Technologies
481.53 KB
Power-transistor.
📁 Related Datasheet
IPB080N03L Power-Transistor (Infineon)
IPB080N03L N-Channel MOSFET (INCHANGE)
IPB080N03LG Power-Transistor (Infineon)
IPB081N06L3 Power-Transistor (Infineon)
IPB081N06L3 N-Channel MOSFET (INCHANGE)
IPB081N06L3G Power-Transistor (Infineon Technologies)
IPB082N10N3G Power-Transistor (Infineon Technologies)
IPB083N10N3 Power-Transistor (Infineon)
IPB083N10N3 N-Channel MOSFET (INCHANGE)
IPB083N10N3G Power-Transistor (Infineon)