Part number:
IPB083N10N3G
Manufacturer:
File Size:
757.25 KB
Description:
Power-transistor.
Datasheet Details
IPB083N10N3G Features
* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 252) ID 100 V 8.2 mW 80 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qual
Datasheet Details
IPB083N10N3G
757.25 KB
Power-transistor.
📁 Related Datasheet
IPB083N10N3 Power-Transistor (Infineon)
IPB083N10N3 N-Channel MOSFET (INCHANGE)
IPB083N15N5LF N-Channel MOSFET (INCHANGE)
IPB083N15N5LF MOSFET (Infineon)
IPB080N03L Power-Transistor (Infineon)
IPB080N03L N-Channel MOSFET (INCHANGE)
IPB080N03LG Power-Transistor (Infineon)
IPB080N06NG Power-Transistor (Infineon Technologies)
IPB083N10N3G Distributor