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IPB083N10N3G - Power-Transistor

Infineon

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Datasheet Details

Part number	IPB083N10N3G
Manufacturer	Infineon
File Size	757.25 KB
Description	Power-Transistor
Datasheet	IPB083N10N3G-Infineon.pdf

IPB083N10N3G Product details

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 252) ID 100 V 8.2 mW 80 A.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

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Published: Feb 14, 2016 |