IPB081N06L3G Power-Transistor

Infineon Technologies

Description

Type OptiMOS™3 Power-Transistor .

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Datasheet Specifications

Part number: IPB081N06L3G
Manufacturer: Infineon ↗ Technologies
File Size: 415.05 KB
Datasheet: IPB081N06L3G_InfineonTechnologies.pdf
Description: Power-Transistor

Features

* Ideal for high frequency switching and sync. rec.
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* N-channel, logic level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified acco

Applications

* Halogen-free according to IEC61249-2-21 IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G Product Summary VDS RDS(on),max (SMD) ID 60 V 8.1 mΩ 50 A Type IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G Package Marking PG-TO263-3 081N06L PG-TO220-3 084N06L PG-TO262-3 084N06L Maximum ratings, a

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IPB081N06L3G Power-Transistor Infineon Technologies

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