IPB083N10N3 Features
* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 252) ID 100 V 8.2 mW 80 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Quali
Datasheet Details
IPB083N10N3, IPB083N10N3G
757.25 KB
Power-transistor.
This datasheet PDF includes multiple part numbers: IPB083N10N3, IPB083N10N3G.
Please refer to the document for exact specifications by model.
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IPB083N10N3 Distributor
