IPB083N10N3, IPB083N10N3G Power-Transistor

Infineon

Description

IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor .

📥 Download Datasheet

IPB083N10N3 Datasheet Preview — This datasheet PDF includes multiple part numbers: IPB083N10N3, IPB083N10N3G. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IPB083N10N3, IPB083N10N3G
Manufacturer: Infineon ↗
File Size: 757.25 KB
Datasheet: IPB083N10N3G-Infineon.pdf
Description: Power-Transistor
Note: This datasheet PDF includes multiple part numbers: IPB083N10N3, IPB083N10N3G.
Please refer to the document for exact specifications by model.

Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 252) ID 100 V 8.2 mW 80 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Quali

IPB083N10N3 Distributors

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IPB083N10N3G Power-Transistor Infineon

Infineon IPB083N10N3-like datasheet