IPB083N10N3
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Power-transistor.
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IPB083N10N3 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IPB083N10N3
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .
IPB083N10N3G - Power-Transistor
(Infineon)
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G
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IPB083N15N5LF - N-Channel MOSFET
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isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .
IPB083N15N5LF - MOSFET
(Infineon)
IPB083N15N5LF
MOSFET
OptiMOSTM 5 Linear FET, 150 V
Features
• Ideal for hot-swap and e-fuse applications • Very low on-resistance RDS(on) • Wide saf.
IPB080N03L - Power-Transistor
(Infineon)
Type
#$% &™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JED.
IPB080N03L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·DESCRIPTION ·Drain Current :ID= 50A@ TC=25℃ ·Drain Source Voltage
: VDSS= 30V(Min) ·100% avalanche tested ·Minimum L.
IPB080N03LG - Power-Transistor
(Infineon)
Type
#$% &™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JED.
IPB080N06NG - Power-Transistor
(Infineon Technologies)
..
IPB080N06N G
IPP080N06N G
OptiMOS® Power-Transistor
Features • Low gate charge for fast switching applications • N-channel enha.
IPB081N06L3 - Power-Transistor
(Infineon)
Type
OptiMOS™3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent g.
IPB081N06L3 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
IPB081N06L3
·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance .