IPP080N03L N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP080N03L，IIPP080N03L *.

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Datasheet Specifications

Part number: IPP080N03L
Manufacturer: INCHANGE
File Size: 241.80 KB
Datasheet: IPP080N03L-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤8.0mΩ
* Enhancement mode: Vth =1.0 to 2.2V (VDS = 0 V, ID=250μA)
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* reliable device for

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 350 PD Total Dissipation @TC=25℃ 47 Tj Max. Operating Junction Temperature 175 Tstg Storage Tem

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IPP080N03L N-Channel MOSFET INCHANGE

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