IPP080N06NG Datasheet, Power-transistor, Infineon Technologies

IPP080N06NG Features

  • Power-transistor
  • Low gate charge for fast switching applications
  • N-channel enhancement - normal level
  • 175 °C operating temperature
  • Avalanche rated
  • Pb-fr

PDF File Details

Part number:

IPP080N06NG

Manufacturer:

Infineon ↗ Technologies

File Size:

481.53kb

Download:

📄 Datasheet

Description:

Power-transistor.

Datasheet Preview: IPP080N06NG 📥 Download PDF (481.53kb)
Page 2 of IPP080N06NG Page 3 of IPP080N06NG

IPP080N06NG Application

  • Applications
  • N-channel enhancement - normal level
  • 175 °C operating temperature
  • Avalanche rated
  • Pb-free lead

TAGS

IPP080N06NG
Power-Transistor
Infineon Technologies

📁 Related Datasheet

IPP080N03L - Power-Transistor (Infineon)
Type #$% &™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JED.

IPP080N03L - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP080N03L,IIPP080N03L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancem.

IPP080N03LG - Power-Transistor (Infineon)
Type #$% &™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JED.

IPP081N06L3G - Power-Transistor (Infineon Technologies)
Type OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent g.

IPP082N10N3G - Power-Transistor (Infineon Technologies)
.DataSheet.co.kr IPP086N10N3 G IPB083N10N3 G IPI086N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excelle.

IPP082N10NF2S - MOSFET (Infineon)
IPP082N10NF2S MOSFET StrongIRFETTM 2 Power-Transistor Features • Optimized for a wide range of applications • N-Channel, normal level • 100% avalanch.

IPP083N10N5 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª5 Power-Transistor, 100 V IPP083N10N5 Data Sheet Rev. 2.0 Final Power Manag.

IPP083N10N5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP083N10N5,IIPP083N10N5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.3mΩ ·Enhancement mode ·Fast Switchi.

IPP084N06L3 - Power-Transistor (Infineon)
Type OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent g.

IPP084N06L3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP084N06L3,IIPP084N06L3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.4mΩ ·Enhanc.

Stock and price

part
Infineon Technologies AG
MOSFET N-CH 60V 80A TO220-3
DigiKey
IPP080N06N-G
0 In Stock
Qty : 500 units
Unit Price : $1
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts