* Ideal for high frequency switching and sync. rec.
* Excellent gate charge x RDS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified according to J
IPP083N10N5 Datasheet (1.76 MB)
IPP083N10N5
1.76 MB
Mosfet.
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSª5 Power-Transistor, 100 V IPP083N10N5
Data Sheet
Rev. 2.0 Final
Power Manag.
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