IPP082N10N3G Power-Transistor

Infineon Technologies

Description

www.DataSheet.co.kr IPP086N10N3 G IPB083N10N3 G IPI086N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor .

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Datasheet Specifications

Part number: IPP082N10N3G
Manufacturer: Infineon ↗ Technologies
File Size: 542.87 KB
Datasheet: IPP082N10N3G_InfineonTechnologies.pdf
Description: Power-Transistor

Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant

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IPP082N10N3G Power-Transistor Infineon Technologies

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