IPP085N06LG Datasheet, Power-transistor, Infineon Technologies

IPP085N06LG Features

• Power-transistor
• For fast switching converters and sync. rectification
• N-channel enhancement - logic level
• 175 °C operating temperature
• Avalanche rated

PDF File Details

Part number:

IPP085N06LG

Manufacturer:

Infineon ↗ Technologies

File Size:

480.71kb

Download:

📄 Datasheet

Description:

Power-transistor.

TAGS

IPP085N06LG

Infineon Technologies

📁 Related Datasheet

IPP080N03L - Power-Transistor (Infineon)
Type #$% &™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JED.

IPP080N03L - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP080N03L，IIPP080N03L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancem.

IPP080N03LG - Power-Transistor (Infineon)
Type #$% &™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JED.

IPP080N06NG - Power-Transistor (Infineon Technologies)
.. IPB080N06N G IPP080N06N G OptiMOS® Power-Transistor Features • Low gate charge for fast switching applications • N-channel enha.

IPP081N06L3G - Power-Transistor (Infineon Technologies)
Type OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent g.

IPP082N10N3G - Power-Transistor (Infineon Technologies)
.DataSheet.co.kr IPP086N10N3 G IPB083N10N3 G IPI086N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excelle.

IPP082N10NF2S - MOSFET (Infineon)
IPP082N10NF2S MOSFET StrongIRFETTM 2 Power-Transistor Features • Optimized for a wide range of applications • N-Channel, normal level • 100% avalanch.

IPP083N10N5 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª5 Power-Transistor, 100 V IPP083N10N5 Data Sheet Rev. 2.0 Final Power Manag.

IPP083N10N5 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP083N10N5，IIPP083N10N5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.3mΩ ·Enhancement mode ·Fast Switchi.

IPP084N06L3 - Power-Transistor (Infineon)
Type OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent g.