IPP086N10N3
INCHANGE
241.77kb
N-channel mosfet.
TAGS
📁 Related Datasheet
IPP086N10N3 - Power-Transistor
(Infineon)
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(.
IPP086N10N3G - Power-Transistor
(Infineon)
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(.
IPP080N03L - Power-Transistor
(Infineon)
Type
#$% &™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JED.
IPP080N03L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPP080N03L,IIPP080N03L
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤8.0mΩ ·Enhancem.
IPP080N03LG - Power-Transistor
(Infineon)
Type
#$% &™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JED.
IPP080N06NG - Power-Transistor
(Infineon Technologies)
..
IPB080N06N G
IPP080N06N G
OptiMOS® Power-Transistor
Features • Low gate charge for fast switching applications • N-channel enha.
IPP081N06L3G - Power-Transistor
(Infineon Technologies)
Type
OptiMOS™3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent g.
IPP082N10N3G - Power-Transistor
(Infineon Technologies)
.DataSheet.co.kr
IPP086N10N3 G IPB083N10N3 G
IPI086N10N3 G IPD082N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excelle.
IPP082N10NF2S - MOSFET
(Infineon)
IPP082N10NF2S
MOSFET
StrongIRFETTM 2 Power-Transistor
Features
• Optimized for a wide range of applications • N-Channel, normal level • 100% avalanch.
IPP083N10N5 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOSTM
OptiMOSª5 Power-Transistor, 100 V IPP083N10N5
Data Sheet
Rev. 2.0 Final
Power Manag.