IPP086N10N3 N-Channel MOSFET

INCHANGE

Description

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP086N10N3， IIPP086N10N3 *.

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Datasheet Specifications

Part number: IPP086N10N3
Manufacturer: INCHANGE
File Size: 241.77 KB
Datasheet: IPP086N10N3-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤8.2mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 320 PD Total Dissipation @TC=25℃ 125 Tj Max. Operating Junction Temperature 175 Tstg Storage T

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IPP086N10N3 N-Channel MOSFET INCHANGE

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