08N60 Datasheet | Specifications & PDF Download

ITP08N60A ITA08N60A N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Adaptor • Charger • SMPS Power Supply • LCD Panel Power Featur

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NDF08N60Z N-Channel Power MOSFET 600 V, 0.95 W Features • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • T

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Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP08N60 SDF08N60 Ver 2.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ

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DataSheet.in NDF08N60Z, NDP08N60Z N-Channel Power MOSFET 600 V, 0.95 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested The

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Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP08N60 SDF08N60 Ver 2.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ

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600V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technolog

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NCE08N60I,NCE08N60K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and desig

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QM08N60F 1 2011-11-15 - 1 - N-Ch 600V Fast Switching MOSFETs General Description The QM08N60F is the highest performance N-ch MOSFETs with extre

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600V N-Channel MOSFETs PMF08N60M General Description These N-Channel enhancement mode power field effect transistors are using advanced super juncti

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GPT08N60 / GPT08N60D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to pro

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AP08N60I-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼

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SCT08N60FD Triac 600V, 8A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed

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Elektronische Bauelemente SSE08N60SL 8A , 600V , RDS(ON) 1.2Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies h

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP08N60 V(BR)DSS 600V N-Channel Power MOSFET RDS(on)MAX

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GPT08N60 / GPT08N60D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to pro

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NCE08N60I,NCE08N60K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and desig

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GSMF08N60M 600V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using advanced super juncti

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF08N60 V(BR)DSS 600V N-Channel Power MOSFET RDS(on)MAX I

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SCT08N60P Triac 600V, 8A STANDARD TRIAC This device is suitable for low power AC switching application, phase control application such as fan speed

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