Preliminary data SPD08P06P SPU08P06P SIPMOS ® P.
Infineon Technologies
8
08P06P - SPD08P06P
Preliminary data SPD08P06P SPU08P06P SIPMOS ® Power-Transistor Features · Product Summary Drain source voltage Drain-source on-state resistance Con.
Infineon Technologies
2
SPP08P06PH - Power-Transistor
SPP08P06P H SIPMOS® Power-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage.
Infineon Technologies
2
SPB08P06PG - Power-Transistor
SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishi.
INCHANGE
2
SPB08P06P - P-Channel MOSFET
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤300mΩ(@VGS= -10V; ID= -6.2A) ·Advanced trench process technolog.
Infineon Technologies
1
SPB08P06P - Power-Transistor
SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishi.
Infineon Technologies
1
SPD08P06P - SIPMOS Power-Transistor
Preliminary data SPD08P06P SPU08P06P SIPMOS ® Power-Transistor Features · Product Summary Drain source voltage Drain-source on-state resistance Con.
Infineon
1
SPD08P06PG - Power-Transistor
SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishi.
Infineon Technologies
1
SPP08P06P - Cool MOS Power Transistor
www.DataSheet4U.com Preliminary data SPP08P06P SPB08P06P SIPMOS ® Power-Transistor Features · Product Summary Drain source voltage Drain-source on.
Infineon Technologies
1
SPU08P06P - SIPMOS Power-Transistor
Preliminary data SPD08P06P SPU08P06P SIPMOS ® Power-Transistor Features · Product Summary Drain source voltage Drain-source on-state resistance Con.