SPP08P06PH Power-Transistor

Infineon Technologies

SPP08P06PH Description

SPP08P06P H SIPMOS® Power-Transistor .

SPP08P06PH Features

* Product Summary
* P-Channel
* Enhancement mode
* Avalanche rated
* dv/dt rated Drain source voltage VDS -60 V Drain-source on-state resistance RDS(on) 0.3 W Continuous drain current ID -8.8 A
* 175°C operating temperature
* Pb-free lead plating; RoHS compliant °

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Datasheet Details

Part number: SPP08P06PH
Manufacturer: Infineon ↗ Technologies
File Size: 477.67 KB
Datasheet: SPP08P06PH-InfineonTechnologies.pdf
Description: Power-Transistor

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Power-Transistor Infineon Technologies

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