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SPP03N60C3

N-Channel MOSFET

SPP03N60C3 Features

* Static drain-source on-resistance: RDS(on) ≤1.4Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Ultra low gate charge

* Ultra low current capability

SPP03N60C3 General Description


*Ultra low gate charge
*Ultra low current capability
*Improved transconductance
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 3.2 IDM Drain Current-Single Pulsed 9.6 PD .

SPP03N60C3 Datasheet (243.23 KB)

Preview of SPP03N60C3 PDF

Datasheet Details

Part number:

SPP03N60C3

Manufacturer:

INCHANGE

File Size:

243.23 KB

Description:

N-channel mosfet.

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SPP03N60C3 N-Channel MOSFET INCHANGE

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