SPP06N60C3 Datasheet, Mosfet, INCHANGE

✔ SPP06N60C3 Features

Static drain-source on-resistance: RDS(on) ≤0.75Ω
Enhancement mode
Fast Switching Speed
100% avalanche tested
Minimum Lot-to-Lot variations for robust device perform

✔ SPP06N60C3 Application

of our products. ISC products are intended for usage in general electronic equipment. The products are not d

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SPP06N60C3

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INCHANGE

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📄 Datasheet

Description:

N-channel mosfet. *Ultra low gate charge *High peak current capability *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source

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Stock and price

Infineon Technologies AG

LOW POWER_LEGACY

DigiKey

SPP06N60C3XKSA1

0 In Stock

Unit Price : $0

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SPP06N60C3 N-Channel MOSFET INCHANGE