SPP04N80C3 - N-Channel MOSFET

INCHANGE

SPP04N80C3 Datasheet Preview — Preview of SPP04N80C3 PDF

Datasheet Details

Part number	SPP04N80C3
Manufacturer	INCHANGE
File Size	243.69 KB
Description	N-Channel MOSFET
Datasheet	SPP04N80C3-INCHANGE.pdf

SPP04N80C3 Product details

Description

High peak current capability Ultra low gate charge Ultra low effective capacitances ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 4 IDM Drain Current-Single Pulsed 12 PD Total Dissipation @TC=25℃ 63 Tj Max.Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Chan

Features

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Static drain-source on-resistance: RDS(on) ≤1.3Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 14, 2020 |