SPP04N80C3 - N-Channel MOSFET
*High peak current capability *Ultra low gate charge *Ultra low effective capacitances *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 4 IDM Drain Current-Single Pulsed 12