SPP04N60C3 - TO-251 N-Channel MOSFET

INCHANGE

SPP04N60C3 Datasheet Preview — Preview of SPP04N60C3 PDF

Datasheet Details

Part number	SPP04N60C3
Manufacturer	INCHANGE
File Size	234.51 KB
Description	TO-251 N-Channel MOSFET
Datasheet	SPP04N60C3_INCHANGE.pdf

SPP04N60C3 Product details

Description

Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 4.5 IDM Drain Current-Single Pulsed 13.5 PD Total Dissipation @TC=25℃ 40 Tj Max.Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MA

Features

Static drain-source on-resistance: RDS(on) ≤0.95Ω.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Dec 3, 2020 |