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SPP04N60C3

TO-251 N-Channel MOSFET

SPP04N60C3 Features

* Static drain-source on-resistance: RDS(on) ≤0.95Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Ultra low gate charge

* High peak current capability

SPP04N60C3 General Description


*Ultra low gate charge
*High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 4.5 IDM Drain Current-Single Pulsed 13.5 PD Total Dissipation @TC=25℃ 40 .

SPP04N60C3 Datasheet (234.51 KB)

Preview of SPP04N60C3 PDF

Datasheet Details

Part number:

SPP04N60C3

Manufacturer:

INCHANGE

File Size:

234.51 KB

Description:

To-251 n-channel mosfet.

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TAGS

SPP04N60C3 TO-251 N-Channel MOSFET INCHANGE

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