SPP04N60S5 - N-Channel MOSFET
*Ultra low gate charge *Ultra low effective capacitance *Improved transconductance *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 4.5 IDM Drain Current-Single Pulsed 9 PD
