0G3 Datasheet | Specifications & PDF Download

MSPM0G3519, MSPM0G3518 MSPM0G1519, MSPM0G1518 SLASFA2A – NOVEMBER 2024 – REVISED APRIL 2025 MSPM0Gx51x Mixed-Signal Microcontrollers With CAN-FD Inter

(56 views)

SLB160N10G3 SLB160N10G3 100V N -Channel MOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced Shielding Gate MOSFET tech

(55 views)

MSPM0G3519, MSPM0G3518 MSPM0G1519, MSPM0G1518 SLASFA2A – NOVEMBER 2024 – REVISED APRIL 2025 MSPM0Gx51x Mixed-Signal Microcontrollers With CAN-FD Inter

(54 views)

Datasheet Data Sheet for SAW Components Band2 Duplexer Product ID: RBD1960G3G Date: Revision: May. 9, 2023 1.0 Features ◆ Package Size: 1.6 x 1.2

(52 views)

Datasheet SDS120J030G3 1200V/30A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp

(27 views)

Datasheet SDS065J020G3 650V/20A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Tempe

(27 views)

SCT015W120G3-4AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mΩ typ., 129 A in an HiP247-4 package Features Order code SCT015W

(21 views)

CMX90G302 1.4 – 7.1GHz Positive Gain-Slope Amplifier +2dB Description The CMX90G302 is a low-power 50 Ω cascadable MMIC gain block suitable for a wid

(21 views)

EcoSPARK) 3 Ignition IGBT 200 mJ, 400 V, N-Channel Ignition IGBT Product Preview FGD2040G3-F085 Features • SCIS Energy = 200 mJ at TJ = 25°C • Low Sat

(20 views)

Silicon N-Channel Power MOSFET CRJL065N60G3F-G General Description： CRJL065N60G3F-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super

(18 views)

CMX90G301 1.4 – 7.1GHz Positive Gain-Slope Amplifier +1dB Description The CMX90G301 is a low-power 50 Ω cascadable MMIC gain block suitable for a wid

(17 views)

Replaces DS6045-1 DCR780G30 Phase Control Thyristor DS6045-2 June 2019 (LN38865) FEATURES  Double Side Cooling  High Surge Capability APPLICA

(16 views)

Datasheet SDS120J020G3 1200V/20A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp

(16 views)

Datasheet SDS065J030G3 650V/30A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Tempe

(16 views)

www.DataSheet4U.com SOLID TANTALUM ELECTROLYTIC CAPACITORS F93 Resin-molded Chip, Standard Series Specifications Item Category Temperature Range C

(15 views)

September 2019 Version 01 MM40G3U120BX 1200V 40A IGBT RoHS Compliant PRODUCT FEATURES □ IGBT chip in trench FS-technology □ Low switching losses □

(15 views)

www.DataSheet.in www.DataSheet.in www.DataSheet.in

(14 views)

www.DataSheet4U.com SOLID TANTALUM ELECTROLYTIC CAPACITORS F93 Resin-molded Chip, Standard Series Specifications Item Category Temperature Range C

(14 views)

May 2020 Version 01 MM40G3U65B 650V 40A IGBT RoHS Compliant PRODUCT FEATURES □ 650V IGBT chip in trench FS-technology □ Low switching losses □ VCE(

(14 views)

SCT012H90G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Fea

(14 views)