0G3 Datasheet | Specifications & PDF Download

MSPM0G3507, MSPM0G3506, MSPM0G3505 SLASEX6B – FEBRUARY 2023 – REVISED OCTOBER 2023 MSPM0G350x Mixed-Signal Microcontrollers With CAN-FD Interface 1 F

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Datasheet SDS120J030G3 1200V/30A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp

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MSPM0G3519, MSPM0G3518 MSPM0G1519, MSPM0G1518 SLASFA2A – NOVEMBER 2024 – REVISED APRIL 2025 MSPM0Gx51x Mixed-Signal Microcontrollers With CAN-FD Inter

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MSPM0G3519, MSPM0G3518 MSPM0G1519, MSPM0G1518 SLASFA2A – NOVEMBER 2024 – REVISED APRIL 2025 MSPM0Gx51x Mixed-Signal Microcontrollers With CAN-FD Inter

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SCT020HU120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an HU3PAK package TAB Gate (1) Driver source (

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CONDUCTIVE POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITORS CG Chip Type, Higher Capacitance series Higher Capacitance, Low ESR, High ripple current. L

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MSPM0G3507, MSPM0G3506, MSPM0G3505 SLASEX6B – FEBRUARY 2023 – REVISED OCTOBER 2023 MSPM0G350x Mixed-Signal Microcontrollers With CAN-FD Interface 1 F

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Datasheet SDS065J020G3 650V/20A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Tempe

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www.DataSheet4U.com Transistors with built-in Resistor NP0G3D2 Silicon PNP epitaxial planar transistor (Tr1) Silicon NPN epitaxial planar transistor

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CONDUCTIVE POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITORS CK Chip Type, Ultra-low ESR series Ultra-low ESR, Higher Capacitance, High ripple current.

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September 2019 Version 01 MM40G3U120BX 1200V 40A IGBT RoHS Compliant PRODUCT FEATURES □ IGBT chip in trench FS-technology □ Low switching losses □

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MSPM0G3507, MSPM0G3506, MSPM0G3505 SLASEX6B – FEBRUARY 2023 – REVISED OCTOBER 2023 MSPM0G350x Mixed-Signal Microcontrollers With CAN-FD Interface 1 F

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CONDUCTIVE POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITORS CS Chip Type, Long Life Assurance series Load life of 5000 hours at 105°C. SMD type : Lead

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-143 Plastic-Encapsulate Diodes ESDU5V0G3 Uni-direction ESD Protection Diode DESCRIPTION Desig

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CONDUCTIVE POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITORS CF Chip Type, Standard series Ultra-low ESR, High ripple current. Load life of 2000 hours a

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Datasheet SDS065J020G3 650V/20A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Tempe

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GT50G321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50G321 The 4th Generation Current Resonance Inverter Switching Applicatio

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CONDUCTIVE POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITORS CJ Chip Type, Low ESR, Higher Capacitance series CK Low ESR, Higher Capacitance, High rip

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June 2020 Version 01 MM50G3T120BM 1200V 50A IGBT RoHS Compliant PRODUCT FEATURES □ IGBT chip in trench FS-technology □ Low switching losses □ VCE(s

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