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DS120030G3 - SiC Schottky Barrier Diode
Datasheet SDS120J030G3 1200V/30A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp.DS120020G3 - SiC Schottky Barrier Diode
Datasheet SDS120J020G3 1200V/20A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp.DS065020G3 - SiC Schottky Barrier Diode
Datasheet SDS065J020G3 650V/20A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Tempe.DS120040G3 - SiC Schottky Barrier Diode
Datasheet SDS120J040G3 1200V/40A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp.SDS065J040G3 - SiC Schottky Barrier Diode
Datasheet SDS065J040G3 650V/40A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Tempe.DS065040G3 - SiC Schottky Barrier Diode
Datasheet SDS065J040G3 650V/40A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Tempe.DS065030G3 - SiC Schottky Barrier Diode
Datasheet SDS065J030G3 650V/30A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Tempe.SDS120J010G3 - SiC Schottky Barrier Diode
Datasheet SDS120J010G3 1200V/10A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp.ADS065J020G3 - SiC Schottky Barrier Diode
Datasheet ADS065J020G3 650V/20A SiC Schottky Barrier Diode Characteristic ➢ AEC-Q101 Qualified ➢ Zero Reverse Recovery Current ➢ Positive temperatur.SDS120J020G3 - SiC Schottky Barrier Diode
Datasheet SDS120J020G3 1200V/20A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp.SDS120J030G3 - SiC Schottky Barrier Diode
Datasheet SDS120J030G3 1200V/30A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp.SDS065J020G3 - SiC Schottky Barrier Diode
Datasheet SDS065J020G3 650V/20A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Tempe.SDS120J040G3 - SiC Schottky Barrier Diode
Datasheet SDS120J040G3 1200V/40A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp.SDS065J030G3 - SiC Schottky Barrier Diode
Datasheet SDS065J030G3 650V/30A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Tempe.DS120010G3 - SiC Schottky Barrier Diode
Datasheet SDS120J010G3 1200V/10A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp.SCT040W120G3-4AG - Automotive-grade silicon carbide Power MOSFET
SCT040W120G3-4AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247-4 package Features Order code SCT040W1.MM40G3U65B - IGBT
May 2020 Version 01 MM40G3U65B 650V 40A IGBT RoHS Compliant PRODUCT FEATURES □ 650V IGBT chip in trench FS-technology □ Low switching losses □ VCE(.FG0700G3DSSWAGT1 - TFT Module
Confidential Document DATA IMAGE CORPORATION TFT Module Specification Preliminary ITEM NO.: FG0700G3DSSWAGT1 Table of Contents 1. COVER & CONTENTS .MM50G3T120BM - IGBT
June 2020 Version 01 MM50G3T120BM 1200V 50A IGBT RoHS Compliant PRODUCT FEATURES □ IGBT chip in trench FS-technology □ Low switching losses □ VCE(s.SCTHS200N120G3AG - Automotive-grade silicon carbide Power MOSFET
SCTHS200N120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 9.3 mΩ typ., 170 A in a STPAK package 4 1 4 32 STPAK Drain(4) Gate(.