Part number:
GT50G321
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
147.25 KB
Description:
Silicon n-channel igbt.
GT50G321_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT50G321
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
147.25 KB
Description:
Silicon n-channel igbt.
GT50G321, silicon N-channel IGBT
GT50G321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50G321 The 4th Generation Current Resonance Inverter Switching Applications Unit: mm FRD included between emitter and collector Enhancement-mode High speed: tf = 0.30 µs (typ.) (IC = 60 A) Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms Emitter-collector fowar
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