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GT50J342 Datasheet - Toshiba

GT50J342 Silicon N-Channel IGBT

GT50J342 Features

* (1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 50 A) (3) High junction temperature: Tj = 175 (max) (4) FRD included between emitter and collector 3. Packaging and Internal Circuit GT50J342 TO-3P(N) 1: Gate 2: Collector (Heat sink) 3: Emitter Start of commercial p

GT50J342-Toshiba.pdf

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Datasheet Details

Part number:

GT50J342

Manufacturer:

Toshiba ↗

File Size:

322.29 KB

Description:

Silicon n-channel igbt.

GT50J342 Distributor

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GT50J342 GT50J342 Silicon N-Channel IGBT Toshiba