Part number:
GT50J342
Manufacturer:
File Size:
322.29 KB
Description:
Silicon n-channel igbt.
* (1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 50 A) (3) High junction temperature: Tj = 175 (max) (4) FRD included between emitter and collector 3. Packaging and Internal Circuit GT50J342 TO-3P(N) 1: Gate 2: Collector (Heat sink) 3: Emitter Start of commercial p
GT50J342 Datasheet (322.29 KB)
GT50J342
322.29 KB
Silicon n-channel igbt.
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