GT50JR22 Datasheet, Igbt, Toshiba

GT50JR22 Features

• Igbt (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.05 µs (

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Part number:

GT50JR22

Manufacturer:

Toshiba ↗

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201.59kb

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📄 Datasheet

Description:

Silicon n-channel igbt.

GT50JR22 Application

• Applications
• Dedicated to Current-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for an

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GT50JR22

Toshiba

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